TRANSIENT PHOSPHORUS DIFFUSION FROM SILICON AND ARGON IMPLANTATION DAMAGE

We have investigated transient enhanced diffusion of phosphorus in sil icon following implantation with silicon or argon ions at low doses. B oth conditions show uphill diffusion of phosphorus due to the defect g radients, but the resulting profiles are quite different because of di fferences in the initial defect distributions. These experiments suppo rt an interstitial pair diffusion mechanism for phosphorus and show th e importance of bulk recombination in determining defect distributions for argon damage annealing.