EFFECT OF THERMIONIC-FIELD EMISSION ON EFFECTIVE BARRIER HEIGHT LOWERING IN IN0.52AL0.48AS SCHOTTKY DIODES

The effective lowering of the Schottky barrier height in In0.52Al0.48A s diodes under reverse bias conditions is investigated by fitting expe rimental reverse-bias I-T relationships to the thermionic-field emissi on theory. This lowering can be explained by thermionic-field emission without assuming a lack of Fermi level pinning. The electron effectiv e mass deduced experimentally from the fitting procedure ranges from 0 .072m0 to 0.087m0, which is comparable to the published data. The effe ctive barrier height is largely dependent on the temperature range of the current. The amount of the lowering is dependent on the electron e ffective mass, but not on the zero-field Schottky barrier height.