ROOM-TEMPERATURE MEASUREMENTS OF STRONG ELECTROABSORPTION EFFECT IN GEXSI1-X SI MULTIPLE QUANTUM-WELLS GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION/

Authors
MURTAZA SS QIAN R KINOSKY D MAYER R TASCH AF BANERJEE S CAMPBELL JC
Citation
Ss. Murtaza et al., ROOM-TEMPERATURE MEASUREMENTS OF STRONG ELECTROABSORPTION EFFECT IN GEXSI1-X SI MULTIPLE QUANTUM-WELLS GROWN BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION/, Applied physics letters, 62(16), 1993, pp. 1976-1978
Citations number
19
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
16
Year of publication
1993
Pages
1976 - 1978
Database
ISI
SICI code
0003-6951(1993)62:16<1976:RMOSEE>2.0.ZU;2-0
Abstract
We have used photocurrent measurements to demonstrate a strong electro absorption effect in GexSi1-x/Si multiple quantum wells grown by remot e plasma-enhanced chemical vapor deposition. Large voltage-induced shi fts in absorption are observed at room temperature in the wavelength r ange from 1.2 to 1.58 mum. We anticipate that the results can be exten ded to fabricate GexSi1-x optoelectronic devices operating at room tem perature.