STUDIES OF DISORDER INDUCED BY ION-IMPLANTATION INTO SILICON USING INSITU STRESS MEASUREMENT TECHNIQUE

Detailed studies of the stresses induced by implantation into silicon of ions of different types, such as boron, argon, krypton, neon, xenon , etc, were carried out in situ, using highly sensitive technique. The measurements were made for keV implanted particles, for a wide range of doses and for different values of dose-rate and target temperatures . It was shown that accumulation of defects up to critical dose of amo rphization is dose-rate dependent for both light and heavy ions. Heavy -ion implantation behaves similarly to light-ion implantation at a hig her temperature. A comparison of TEM investigation and triple-crystals X-ray measurement with stress data was made. The results indicate tha t (i) the ion-beam-induced deformation correlates with structural chan ges, and (ii) both homogeneous and heterogeneous mechanisms are involv ed in the structural transformations.