RADIATION-INDUCED DIFFUSION OF XE TO A POLYMER FILM

In the present work we have studied the most important parameters whic h can influence the radiation induced diffusion mechanism of Xe ions i mplanted into photoresist films. With this aim we have Ar post-bombard ed the Xe implanted samples at a fixed Ar ion energy, covering a wide range of fluences. In addition the implantation fluences as well as th e ion species used in the bombardment were changed. The results show t hat the radiation induced diffusion process undergoes a trapping-detra pping mechanism. The trapping probability is proportional to the impla nted fluence, and the detrapping one depends on the kind of ion used i n the bombarding experiment. Finally it is shown that the nuclear ener gy transfer plays an important role in the radiation induced diffusion mechanism.