NONEQUILIBRIUM PHASE-TRANSITIONS DURING ION-BEAM-INDUCED AMORPHIZATION CRYSTALLIZATION OF SEMICONDUCTORS

A new approach in modelling of ion-beam-induced amorphization-crystall ization processes in semiconductors based on the conception of non-equ ilibrium (kinetic) phase transitions and stochastic processes is prese nted. Using previously proposed ''structural'' mechanism of the ''amor phous state'' <-- --> ''crystalline state'' phase transitions, which o ccur with the participation of point defects within the semiconductor lattice, the kinetic equations for the main variables describing the n on-equilibrium transformations in the open system ''ion beam + semicon ductor'' are received and analyzed.