TEM STUDY OF ION-IMPLANTED GAAS AFTER PULSED ELECTRON-BEAM ANNEALING

Authors
GAIGHER HL ALBERTS HW
Citation
Hl. Gaigher et Hw. Alberts, TEM STUDY OF ION-IMPLANTED GAAS AFTER PULSED ELECTRON-BEAM ANNEALING, Radiation effects and defects in solids, 125(4), 1993, pp. 373-380
Citations number
21
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
125
Issue
4
Year of publication
1993
Pages
373 - 380
Database
ISI
SICI code
1042-0150(1993)125:4<373:TSOIGA>2.0.ZU;2-G
Abstract
(001) GaAs single crystals were implanted with 150 keV Cr+ ions using a dose of 5 x 10(15) ions cm-2 The amorphized surface layers were subj ected to pulsed electron beam annealing at energy densities in the ran ge 0-1.3 J cm-2. A detailed TEM investigation of the damaged and annea led surface layer was conducted. These observations were correlated wi th backscattering results.