CRYSTAL-FIELD SPLITTING OF DEFECT PAIR SPECTRA IN GAAS

Authors
REYNOLDS DC LOOK DC JOGAI B KASPI R EVANS KR
Citation
Dc. Reynolds et al., CRYSTAL-FIELD SPLITTING OF DEFECT PAIR SPECTRA IN GAAS, Solid state communications, 102(1), 1997, pp. 47-51
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
102
Issue
1
Year of publication
1997
Pages
47 - 51
Database
ISI
SICI code
0038-1098(1997)102:1<47:CSODPS>2.0.ZU;2-9
Abstract
We report three photoluminescent lines in the 1.504-1.507 eV range in GaAs, associated with excitons bound to defect pairs. The lines are al l split by crystal field interaction introduced by uniaxial stress. Th e highest energy line is strongly polarized in the [110] direction. Th e polarization selection rules are relaxed by an applied magnetic fiel d clearly demonstrating the crystal field splitting. (C) 1997 Publishe d by Elsevier Science Ltd.