ANODIC FORMATION OF POROUS LAYERS WITH A GIVEN STRUCTURE ON N-TYPE SILICON

On the basis of an investigation into the kinetics of growth of porous silicon at various current densities and anodic treatment times under the influence of steady illumination it was shown that it is possible to obtain thick uniform layers of silicon (100-150 mum) with various degrees of porosity by optical irradiation. In a specific range of cur rents it is possible to vary the growth rate and the pore structure an d, consequently, the degree of porosity in the range of 10-60% by vary ing the intensity of the light, irrespective of the thickness of the l ayer formed. This is of interest in the solution of a series of analyt ical and technological problems.