The etching of a number of polyimides and polyamide acids in oxygen pl
asmas is studied for the purpose of clarifying the influence of their
structure on the etching behavior. The temperature dependences of the
etching rates, as well as of the release of gaseous products and the a
bsorption of oxygen, are measured. The rate of etching of the polyimid
es is less than that of the corresponding polyamide acids by a factor
of 2. It is shown that other than a dependence on the structure of the
se polymers, there are characteristic temperature regions for etching
in which the activation energies are identical in all cases. It is sug
gested that the limiting stage is the association of oxygen through di
fferent forms of active centers that are formed in the plasma.