SELF-CONSISTENT ELECTRON SUBBANDS OF GAAS ALGAAS HETEROSTRUCTURES IN MAGNETIC-FIELDS PARALLEL TO THE INTERFACE/

Citation
T. Jungwirth et L. Smrcka, SELF-CONSISTENT ELECTRON SUBBANDS OF GAAS ALGAAS HETEROSTRUCTURES IN MAGNETIC-FIELDS PARALLEL TO THE INTERFACE/, Journal of physics. Condensed matter, 5(15), 1993, pp. 217-222
Citations number
5
ISSN journal
09538984
Volume
5
Issue
15
Year of publication
1993
Pages
217 - 222
Database
ISI
SICI code
0953-8984(1993)5:15<217:SESOGA>2.0.ZU;2-Y
Abstract
The effect of strong magnetic fields parallel to the GaAs/GaxAl1-xAs i nterface on the subband structure of a 2D electron layer is investigat ed theoretically. A system with two levels occupied in zero magnetic f ield is considered and the magnetic-field-induced depletion of the sec ond subband is studied. The confining potential and the electron energ y dispersion relations are calculated self-consistently. The electron- electron interaction is taken into account in the Hartree approximatio n.