A planar quasi-optical Schottky receiver based on the quasi-integrated
horn antenna has been developed and tested over the 230-280 GHz bandw
idth. The receiver consists of a planar GaAs Schottky diode placed at
the feed of a dipole-probe suspended on a thin dielectric membrane in
an etched-pyramidal horn cavity. The diode has a 1.2 mum anode diamete
r and a low parasitic capacitance due to the use of an etched surface
channel. The antenna-mixer results in a measured DSB conversion loss a
nd noise temperature at 258 GHz of 7.2dB +/- 0.5dB and 1310K +/- 70K,
respectively, at room temperature. The design is compatible with SIS m
ixers, and the low cost of fabrication and simplicity makes it ideal f
or submillimeter-wave imaging arrays requiring a 10-20% bandwidth.