THE CHARACTERIZATION OF SULFUR INCORPORATION IN GAAS(1-X)SX COMPOUND BY INFRARED-SPECTROSCOPY

This study focused on the incorporation of sulfur in a GaAs(1-x)Sx sem iconductor lattice. The experimental infrared absorption spectra of th is polycrystalline compound exhibited a number of peaks with frequency shifts that varied to a greater or lesser degree according to the mol ar fraction x. Experimental results are fitted by an empirical force f ield based on a theoretical model for the cell units [20]. The sulfur atoms are assumed to be incorporated in the substance taking the place of arsenic atoms. if the S-S second-neighbor force constant has a hig h value, there is a covalent bond, thus explaining the non-ionic effec t of sulfur in electrical majority carrier measurement.