F. Lalande et al., THE CHARACTERIZATION OF SULFUR INCORPORATION IN GAAS(1-X)SX COMPOUND BY INFRARED-SPECTROSCOPY, Solid state communications, 86(2), 1993, pp. 73-78
This study focused on the incorporation of sulfur in a GaAs(1-x)Sx sem
iconductor lattice. The experimental infrared absorption spectra of th
is polycrystalline compound exhibited a number of peaks with frequency
shifts that varied to a greater or lesser degree according to the mol
ar fraction x. Experimental results are fitted by an empirical force f
ield based on a theoretical model for the cell units [20]. The sulfur
atoms are assumed to be incorporated in the substance taking the place
of arsenic atoms. if the S-S second-neighbor force constant has a hig
h value, there is a covalent bond, thus explaining the non-ionic effec
t of sulfur in electrical majority carrier measurement.