ELECTRICAL-PROPERTIES OF POLYIMIDE ON N-GAAS (100) INTERFACES BY A PULSED LASER EVAPORATION TECHNIQUE

Authors
CHAUDHARI GN RAO VJ
Citation
Gn. Chaudhari et Vj. Rao, ELECTRICAL-PROPERTIES OF POLYIMIDE ON N-GAAS (100) INTERFACES BY A PULSED LASER EVAPORATION TECHNIQUE, Applied physics. A, Solids and surfaces, 56(4), 1993, pp. 353-354
Citations number
9
Journal title
Applied physics. A, Solids and surfaces → ACNP
ISSN journal
07217250
Volume
56
Issue
4
Year of publication
1993
Pages
353 - 354
Database
ISI
SICI code
0721-7250(1993)56:4<353:EOPON(>2.0.ZU;2-2
Abstract
Incorporation of a thin insulating layer of polymer-like polyimide dep osited by pulsed laser evaporation technique between metal and n-GaAs has resulted in diode structures with MIS and Schottky-barrier-type ca pacitance-voltage and current-voltage characteristics. These structure s have the potential to be useful in improving the performance of GaAs FETs for microwave and high-speed applications.