M. Ilg et al., SURFACTANT-MEDIATED MOLECULAR-BEAM EPITAXY OF HIGH-QUALITY (111)B-GAAS, Applied physics. A, Solids and surfaces, 56(4), 1993, pp. 397-399
We present a novel approach to the molecular beam epitaxy of [111]-ori
ented GaAs. Surface-segregating In employed as an isoelectronic surfac
tant allows us to achieve mirror-like (111) GaAs surfaces within a wid
e range of growth conditions. Scanning electron and atomic force micro
scopy confirm the excellent morphology of the resulting samples. High-
resolution X-ray diffraction shows the incorporation of In into the fi
lms to be negligible. Finally, we demonstrate a 10 angstrom-In0.2Ga0.8
As/300 angstrom-GaAs superlattice based on surfactant-grown GaAs with
a photoluminescence linewidth as narrow as 4.2 meV.