SHUBNIKOV-DE-HAAS OSCILLATIONS IN FE-DOPED AND CO-DOPED HGSE UNDER PRESSURE

Authors
NEIFELD EA DEMCHUK KM HARUS GI BOUBNOVA AE DOMANSKAYA LI SHTRAPENIN GL PARANCHICH SY
Citation
Ea. Neifeld et al., SHUBNIKOV-DE-HAAS OSCILLATIONS IN FE-DOPED AND CO-DOPED HGSE UNDER PRESSURE, Physica status solidi. b, Basic research, 198(1), 1996, pp. 143-148
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
198
Issue
1
Year of publication
1996
Pages
143 - 148
Database
ISI
SICI code
0370-1972(1996)198:1<143:SOIFAC>2.0.ZU;2-S
Abstract
We have investigated the effect of pressure on Shubnikov-de Haas oscil lations in the gapless semiconductor HgSe doped with Fe and Co. For Hg Se(Fe) an increase of pressure results in a decrease of the electron c oncentration in accordance with the Kane model for constant Fermi ener gy. In contrast, in HgSe(Co) the electron concentration is independent of pressure, i.e. the Fermi level is not pinned.