INVESTIGATION OF COEXISTENCE OF WEAKLY RELAXED NEUTRAL DEEP DONOR (D-0) AND DX(-) STATES IN ALXGA1-XAS-SE USING ICTS UNDER PRESSURE

Authors
TAKARABE K HIRANO Y MINOMURA S MATSUDA K OHNISHI H FUJITA K WATANABE T
Citation
K. Takarabe et al., INVESTIGATION OF COEXISTENCE OF WEAKLY RELAXED NEUTRAL DEEP DONOR (D-0) AND DX(-) STATES IN ALXGA1-XAS-SE USING ICTS UNDER PRESSURE, Physica status solidi. b, Basic research, 198(1), 1996, pp. 187-192
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
198
Issue
1
Year of publication
1996
Pages
187 - 192
Database
ISI
SICI code
0370-1972(1996)198:1<187:IOCOWR>2.0.ZU;2-8
Abstract
The coexistence of two deep donors in AlxGa1-xAs:Se with and without a capture barrier is reported. The difference of their nature is found in the dependence of the electron emission process on filling pulse ti me, temperature, and pressure.