K. Takarabe et al., INVESTIGATION OF COEXISTENCE OF WEAKLY RELAXED NEUTRAL DEEP DONOR (D-0) AND DX(-) STATES IN ALXGA1-XAS-SE USING ICTS UNDER PRESSURE, Physica status solidi. b, Basic research, 198(1), 1996, pp. 187-192
The coexistence of two deep donors in AlxGa1-xAs:Se with and without a
capture barrier is reported. The difference of their nature is found
in the dependence of the electron emission process on filling pulse ti
me, temperature, and pressure.