K. Takarabe, PHOTOLUMINESCENCE STUDY OF RARE-EARTH-DOPED SEMICONDUCTORS UNDER PRESSURE, Physica status solidi. b, Basic research, 198(1), 1996, pp. 211-222
High pressure photoluminescence (PL) studies are reported for InP:Yb a
nd GaAs:Er, O. In InP:Yb; the thermally quenched intra-4f luminescence
is recovered bg applying pressure near room temperature. Simultaneous
ly the band-edge related emission decreases. This result is interprete
d qualitatively by a thermal equilibrium between the photocreated elec
tron-hole pair of the host InP and the excited state of the 4f shell.
In MOCVD grown GaAs:Er, O, the sharp luminescence from tile intra-4f t
ransition of Er is observed at 1.538 mu m at atmospheric pressure. Thi
s is the main emission associated with the Er-Ga-2O center which has C
-2v symmetry. For increasing pressure tile PL intensity of the Er intr
a-4f emission increases and also some new PL lines appear at low tempe
ratures. These pressure-induced new lines are assigned to other Er cen
ters with different atomic configurations.