Magnetotransport experiments under in-plane [110] uniaxial compression
up to 2.4 kbar of a (001) D-GaAs/Al0.5Ga0.5As single heterostructure
have been performed. A pronounced redistribution of carriers in the sp
in-split lowest heavy hole subband in favour of the less populated and
lighter mass one is established but tile total carrier concentration
reveals only a 5% decrease. The difference between the effective masse
s in spin subbands becomes less. The spin subband splitting decreases
by a factor of 2.5 under maximum compression.