We have performed a pressure-tuned resonance Raman scattering study in
short-period GaSb/InAs SLs in the region of E(1) and E(1) + Delta(1)
in GaSb. Resonance profiles for polarized Raman scattering by both LO
and elastic interface modes reveal two electronic transitions with two
different types of Frohlich-interaction-induced scattering. The LQ re
sonance at the E(1) gap displays strong interference and we attribute
it to intrinsic intrasubband Frohlich scattering, which is dipole allo
wed due to the difference in the degree of localization of the electro
n and hole wave functions. A new resonance enhancement peak: not prese
nt in the bulk, has been observed in between the E(1) and E(1) + Delta
(1) gaps of GaSb. This resonance appears to be dominated by extrinsic
Frohlich scattering.