IDENTIFICATION OF THE L-BAND IN INXGA1-XP IN0.5AL0.5P MULTIPLE-QUANTUM WELLS FROM HIGH-PRESSURE MEASUREMENT/

Authors
PATEL D INTERHOLZINGER K THIAGARAJAN P ROBINSON GY MENONI CS
Citation
D. Patel et al., IDENTIFICATION OF THE L-BAND IN INXGA1-XP IN0.5AL0.5P MULTIPLE-QUANTUM WELLS FROM HIGH-PRESSURE MEASUREMENT/, Physica status solidi. b, Basic research, 198(1), 1996, pp. 337-341
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
198
Issue
1
Year of publication
1996
Pages
337 - 341
Database
ISI
SICI code
0370-1972(1996)198:1<337:IOTLII>2.0.ZU;2-H
Abstract
High pressure photoluminescence measurements used to study the band st ructure of the InxGa1-xP/In0.5Al0.5P (x less than or equal to 0.48) mu ltiple quantum wells revealed that in narrow-lattice-matched and highl y tensile strain structures the L(1c) band is the lowest conduction ba ndstate. The L(1c) minimum was identified as it shifted with pressure at a rate of (60 +/- 5) meV/GPa, considerably smaller than that of the direct gap Gamma(1c) states.