Ep. Oreilly et al., DETERMINATION OF GAIN AND LOSS MECHANISMS IN SEMICONDUCTOR-LASERS USING PRESSURE TECHNIQUES, Physica status solidi. b, Basic research, 198(1), 1996, pp. 363-373
Both the gain and loss mechanisms in semiconductor lasers are determin
ed in large part by the band structure of the laser active region and
tile surrounding material layers. Uniaxial stress measurements confirm
the predicted variation of gain and threshold characteristics due to
the incorporation of axial strain; mitl-l large tensile or compressive
strain reducing tile carrier and current density required to reach th
reshold. The combination of hydrostatic pressure measurements and band
structure calculations enables identification of the dominant loss me
chanisms in semiconductor lasers; identifying leakage from the active
to the cladding region as the dominant loss mechanism in GaInP/AlGaInP
visible lasers: and Auger recombination as the dominant loss mechanis
m and cause of the temperature sensitivity of long wavelength (1.3 to
1.55 mu m) lasers.