HYDROSTATIC-PRESSURE DEPENDENCE OF THE THRESHOLD CURRENT IN 1.5 MU-M STRAINED-QUANTUM-WELL LASERS

Citation
Ar. Adams et al., HYDROSTATIC-PRESSURE DEPENDENCE OF THE THRESHOLD CURRENT IN 1.5 MU-M STRAINED-QUANTUM-WELL LASERS, Physica status solidi. b, Basic research, 198(1), 1996, pp. 381-388
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
198
Issue
1
Year of publication
1996
Pages
381 - 388
Database
ISI
SICI code
0370-1972(1996)198:1<381:HDOTTC>2.0.ZU;2-U
Abstract
Results are presented which show that the radiative current in 1.5 mu m quantum well lasers obeys simple theory but that the total current t hrough the device at room temperature is dominated by Auger recombinat ion. The measured temperature and pressure dependencies of the thresho ld current show that it is phonon-assisted Auger recombination that is operative. This is less sensitive than band-to-band Auger processes t o the exact form of the band structure and explains why inbuilt strain has little effect on the temperature sensitivity of the threshold cur rent and why there is little change in threshold current as one goes f rom 1.5 to 1.3 mu m devices.