The adsorption of chlorine on GaAs(110) surfaces was followed by using
a Kelvin probe as well as ultraviolet photoemission, Auger electron,
and low-energy electron energy-loss spectroscopy. The bombardment of c
hlorinated surfaces with electrons promotes the desorption of the adso
rbate. Electron-stimulated desorption from chlorinated GaAs(110) surfa
ces reveals two different chlorine adsorption sites, which are equally
occupied after chlorine adsorption and before electron-stimulated des
orption. The assignment of two different adsorption sites of chlorine
on GaAs(110) surfaces to Ga-Cl and As-Cl bonds is supported by further
experimental observations. Below one monolayer, one chlorine atom wil
l be bound to each of the Ga and As surface atoms while for larger chl
orine uptake Ga-Cl2 and As-Cl2 complexes might possibly form.