FORMATION PROCESS OF SNO2 THIN-FILMS BY SOL-GEL METHOD

Citation
T. Furusaki et al., FORMATION PROCESS OF SNO2 THIN-FILMS BY SOL-GEL METHOD, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 101(4), 1993, pp. 451-455
Citations number
17
ISSN journal
09145400
Volume
101
Issue
4
Year of publication
1993
Pages
451 - 455
Database
ISI
SICI code
0914-5400(1993)101:4<451:FPOSTB>2.0.ZU;2-2
Abstract
Tin Oxide thin films were prepared by sol-gel method using colloidal p articles derived from an inorganic salt. The thickness (t) of SnO2 fil ms and the pulling rates (v) of substrates from dipping solutions were correlated with an expression of t is-proportional-to v0.53. The form ation process of SnO2 thin films was studied. Well-crystallized SnO2 t hin films were obtained above 550-degrees-C after successive dehydrati on of OH groups. SnO2 thin films prepared at 550-degrees-C were compos ed of very fine particles with 10-20 nm in diameter. Firing at higher temperatures caused the grain growth without substantial densification of the films, leading to coarse microstructure.