Ba(Mg1/3Ta2/3)O-3 thin films were prepared by a sol-gel process involv
ing the reaction of barium isopropoxide, tantalum ethoxide, and magnes
ium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coat
ing, and heat treatment. Transmission electron microscopy, x-ray diffr
action, and Raman spectroscopy were used for the characterization of t
he thin films. It was shown that the thin films tend to crystallize wi
th small grains sized below 100 nm. Crystalline phase with cubic (diso
rdered) perovskite structure was formed in the samples annealed at a v
ery low temperature (below 500 degrees C), and well-crystallized thin
films were obtained at 700 degrees C. Although disordered perovskite i
s dominant in the thin films annealed below 1000 degrees C, a low volu
me fraction of 1:2 ordering domains was found in the samples and grows
with an increase of annealing temperature.