VACANCY STRUCTURES ON THE GAN(0001) SURFACE

Authors
PACKARD WE DOW JD DOVERSPIKE K KAPLAN R NICOLAIDES R
Citation
We. Packard et al., VACANCY STRUCTURES ON THE GAN(0001) SURFACE, Journal of materials research, 12(3), 1997, pp. 646-650
Citations number
13
Categorie Soggetti
Material Science
Journal title
Journal of materials research → ACNP
ISSN journal
08842914
Volume
12
Issue
3
Year of publication
1997
Pages
646 - 650
Database
ISI
SICI code
0884-2914(1997)12:3<646:VSOTGS>2.0.ZU;2-R
Abstract
Scanning tunneling microscopy images are reported for the wurtzite GaN (0001) surface. Terraces are observed, with three kinds of defect stru ctures that are assigned to ordered N-vacancies: (i) striations perpen dicular to the step edges, (ii) row defects spaced about 16 Angstrom t hat intersect the steps at an angle of 30 degrees, and (iii) ''oval'' defects that result from intersections of lines of vacancies (oriented at 60 degrees with respect to step edges) with the row defects.