Y. Arimoto et al., ADVANCED METAL-OXIDE SEMICONDUCTOR AND BIPOLAR-DEVICES ON BONDED SILICON-ON-INSULATORS, Journal of the Electrochemical Society, 140(4), 1993, pp. 1138-1143
Silicon-on-insulator devices have problems with both performance and c
ost. We developed three advanced devices on bonded SOI produced using
pulse-field-assisted bonding and selective polishing in an attempt to
solve these problems. We tightly bonded highly implanted wafers, epita
xial wafers, and wafers covered with smoothed CVD oxide at temperature
s below 1000-degrees-C. We uniformly thinned bonded wafers by grinding
, polishing, resistivity-sensitive etching, or selective polishing. We
formed buried layers and buried electrodes by bonding and polishing t
echniques. Our high speed epitaxial-base transistor on 1-mum thick SOI
has a cutoff frequency of 32 GHz. Our lateral bipolar transistor with
a thin base on 0.15-mum thick SOI had a cutoff frequency of 4 GHz. A
double-gate MOSFET on 60-ran thick SOI had a transconductance of more
than twice that of a conventional SOI MOSFET This paper discusses furt
her advantages of bonded SOI techniques.