ADVANCED METAL-OXIDE SEMICONDUCTOR AND BIPOLAR-DEVICES ON BONDED SILICON-ON-INSULATORS

Silicon-on-insulator devices have problems with both performance and c ost. We developed three advanced devices on bonded SOI produced using pulse-field-assisted bonding and selective polishing in an attempt to solve these problems. We tightly bonded highly implanted wafers, epita xial wafers, and wafers covered with smoothed CVD oxide at temperature s below 1000-degrees-C. We uniformly thinned bonded wafers by grinding , polishing, resistivity-sensitive etching, or selective polishing. We formed buried layers and buried electrodes by bonding and polishing t echniques. Our high speed epitaxial-base transistor on 1-mum thick SOI has a cutoff frequency of 32 GHz. Our lateral bipolar transistor with a thin base on 0.15-mum thick SOI had a cutoff frequency of 4 GHz. A double-gate MOSFET on 60-ran thick SOI had a transconductance of more than twice that of a conventional SOI MOSFET This paper discusses furt her advantages of bonded SOI techniques.