PHOTOLUMINESCENCE MICROSCOPY OF INGAN QUANTUM-WELLS

Submicron spatial resolution photoluminescence is used to assess radia tive efficiency and spatial uniformity of GaN/InGaN heterojunctions. R oom temperature photoluminescence of multiple InGaN quantum wells with GaN barriers fabricated by electron-cyclotron resonance assisted mole cular beam epitaxy was measured as a function of position on a facet p erpendicular to the layer structure. Our high resolution studies revea l that the radiative recombination for the InGaN quantum wells is 50-5 0 times more efficient than for the underlying GaN film. (C) 1997 Amer ican Institute of Physics.