PIEZOELECTRIC PROPERTIES OF C-AXIS ORIENTED PB(ZR,TI)O-3 THIN-FILMS

Piezoelectric properties of the c-axis oriented Pb(Zr,Ti)O-3 (PZT) thi n films were investigated. The PZT films with a composition near the m orphotropic phase boundary were epitaxially grown on (100)Pt-coated Mg O substrates by rf-magnetron sputtering. The PZT films exhibited excel lent ferroelectricity with a remanent polarization more than 50 mu C/c m(2). In order to examine intrinsic piezoelectric properties, cantilev er structures were microfabricated with the PZT films. The piezoelectr ic coefficient d(31) Of PZT films, which were not subjected to poling treatments, was measured directly from the transverse expansion of the cantilever beams. The measurements revealed that the PZT films were n aturally polarized and had a relatively large piezoelectric coefficien t d(31) of 100 x 10-(12) m/V without poling. (C) 1997 American Institu te of Physics.