VERY-LOW-DENSITY 2-DIMENSIONAL HOLE GAS IN AN INVERTED GAAS ALAS INTERFACE/

Authors
HANEIN Y SHTRIKMAN H MEIRAV U
Citation
Y. Hanein et al., VERY-LOW-DENSITY 2-DIMENSIONAL HOLE GAS IN AN INVERTED GAAS ALAS INTERFACE/, Applied physics letters, 70(11), 1997, pp. 1426-1428
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
11
Year of publication
1997
Pages
1426 - 1428
Database
ISI
SICI code
0003-6951(1997)70:11<1426:V2HGIA>2.0.ZU;2-I
Abstract
We utilize an inverted heterostructure grown on (311)A GaAs to realize a two-dimensional hole gas (2DHG) with a built-in back gate. The dens ity of the 2DHG is easily and reproducibly varied between 5 x 10(9) an d 5 x 10(11) cm(-2). The mobility of the 2DHG is highly anisotropic in the (311)A plane. (C) 1997 American Institute of Physics.