STUDY ON THE EFFECTS OF MINORITY-CARRIER LEAKAGE IN INASSB INPASSB DOUBLE-HETEROSTRUCTURE/

Authors
LANE B WU D YI HJ DIAZ J RYBALTOWSKI A KIM S ERDTMANN M JEON H RAZEGHI M
Citation
B. Lane et al., STUDY ON THE EFFECTS OF MINORITY-CARRIER LEAKAGE IN INASSB INPASSB DOUBLE-HETEROSTRUCTURE/, Applied physics letters, 70(11), 1997, pp. 1447-1449
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
11
Year of publication
1997
Pages
1447 - 1449
Database
ISI
SICI code
0003-6951(1997)70:11<1447:SOTEOM>2.0.ZU;2-B
Abstract
InAsxSb1-x/InP1-x-yAsxSby double heterostructures have been grown on I nAs substrates by metal-organic chemical vapor deposition. The minorit y carrier leakage to the cladding layers was studied with photolumines cence measurements on the InAsSb/InPAsSb double heterostructures. A ca rrier leakage model is used to extract parameters related to the leaka ge current (diffusion-coefficient and length) from experimental result s;Using the obtained parameters, the temperature dependence of the thr eshold current density of InAsSb/InPAsSb double heterostructure lasers is predicted and compared with experimental results. (C) 1997 America n Institute of Physics.