ELECTRICAL-RESISTIVITY ANISOTROPY OF SILICON-DOPED N-INDIUM SELENIDE

Authors
RIERA J SEGURA A CHEVY A
Citation
J. Riera et al., ELECTRICAL-RESISTIVITY ANISOTROPY OF SILICON-DOPED N-INDIUM SELENIDE, Physica status solidi. a, Applied research, 136(1), 1993, pp. 47-50
Citations number
8
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
136
Issue
1
Year of publication
1993
Pages
47 - 50
Database
ISI
SICI code
0031-8965(1993)136:1<47:EAOSNS>2.0.ZU;2-I