GAAS MSM PHOTODIODE USING THE HIGHLY DOPED CHANNEL LAYER OF A HETEROSTRUCTURE MESFET

Authors
PORGES M LALINSKY T SAFRANKOVA J HUDEK P KRAUS J TEGUDE FJ VONWENDORFF W JAGER D
Citation
M. Porges et al., GAAS MSM PHOTODIODE USING THE HIGHLY DOPED CHANNEL LAYER OF A HETEROSTRUCTURE MESFET, Physica status solidi. a, Applied research, 136(1), 1993, pp. 65-69
Citations number
11
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
136
Issue
1
Year of publication
1993
Pages
65 - 69
Database
ISI
SICI code
0031-8965(1993)136:1<65:GMPUTH>2.0.ZU;2-X