WAVELENGTH DEPENDENCE OF T0 IN INGAASP SEMICONDUCTOR-LASER DIODES

The temperature sensitivity of laser threshold current in single mode, wavelength tunable, InGaAsP bulk active region semiconductor lasers d iodes is measured in the temperature range, 293 K less than or similar to T less than or similar to 355 K and wavelength range 1.23 mum less than or similar to lambda less than or similar to 1.35 mum. When prop er account is taken of peak gain variation with temperature, the tempe rature dependence of laser threshold current (parameterized by T0) is insensitive to lasing wavelength over a wide tuning range.