TEMPERATURE CHARACTERISTICS OF (INAS)1 (GAAS)4 SHORT-PERIOD SUPERLATTICES QUANTUM-WELL LASER/

The temperature characteristics of (InAs)1/(GaAs)4 superlattice quantu m well lasers are analyzed both experimentally and theoretically. The measured threshold current density as a function of temperature is cha racterized by a T0=135 K for 115 K < T < 380 K and by T0 = 47 K for 42 0 K < T < 480 K. The radiative and nonradiative recombination rates an d the gain versus carrier density relationship in monolayer superlatti ce structures are calculated. Inclusion of the nonradiative recombinat ion process is necessary to explain the observed high-temperature char acteristics of these lasers.