ROOM-TEMPERATURE LASING ACTION IN IN0.51GA0.49P IN0.2GA0.8AS MICROCYLINDER LASER-DIODES/

Authors
LEVI AFJ SLUSHER RE MCCALL SL PEARTON SJ HOBSON WS
Citation
Afj. Levi et al., ROOM-TEMPERATURE LASING ACTION IN IN0.51GA0.49P IN0.2GA0.8AS MICROCYLINDER LASER-DIODES/, Applied physics letters, 62(17), 1993, pp. 2021-2023
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
17
Year of publication
1993
Pages
2021 - 2023
Database
ISI
SICI code
0003-6951(1993)62:17<2021:RLAIII>2.0.ZU;2-H
Abstract
We report room-temperature operation of electrically pumped whispering -gallery mode In0.51Ga0.49P/In0.2Ga0.8As microcylinder laser diodes wi th emission at wavelength lambda = 1.0 mum and threshold current I(th) =5 mA. Because the lasing modes do not overlap the diode's central reg ion, carrier density is not efficiently pinned by above-threshold stim ulated emission.