Data are presented demonstrating a design and fabrication process for
the realization of low-threshold, high-output vertical-cavity surface-
emitting laser diodes with low series resistance. Lateral current conf
inement is achieved in the laser structures through the use of molecul
ar-beam epitaxial regrowth over a 1000-angstrom-thick patterned layer
of low growth temperature AlGaAs incorporated into the p-type top mirr
or. A maximum cw output power in excess of 5.7 mW, at 300 K is demonst
rated for 15-mum-diam devices. With increased top mirror reflectivity
(through the addition of dielectric layers), the low series resistance
of the design results in a bias voltage of only 1.8 V at a threshold
current of 1.9 mA for 10-mum-diam devices.