An AlGaAs/GaAs ridge directional coupler electro-optic modulator with
a voltage-length (VL) product of only 7.0 V mm (L=3.5 mm, V=2 V) is re
ported. The low VL product has resulted from the efficient electrode c
onfiguration as well as the large overlap between the optical and elec
trical fields in the waveguides. Propagation loss of 3.4 dB/cm and the
measured I-V characteristics confirm that the contributions from the
Franz-Keldysh, charge-carrier, and thermal effects are small. To our k
nowledge, this is the lowest VL product ever reported for an electro-o
ptic directional coupler modulator utilizing the Pockels effect. An ex
tinction ratio of 13 dB was measured for the modulator at 0.83 mum wav
elength.