DIRECTIONAL COUPLER ELECTROOPTIC MODULATOR IN ALGAAS GAAS WITH LOW VOLTAGE-LENGTH PRODUCT/

Citation
Mn. Khan et al., DIRECTIONAL COUPLER ELECTROOPTIC MODULATOR IN ALGAAS GAAS WITH LOW VOLTAGE-LENGTH PRODUCT/, Applied physics letters, 62(17), 1993, pp. 2033-2035
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
62
Issue
17
Year of publication
1993
Pages
2033 - 2035
Database
ISI
SICI code
0003-6951(1993)62:17<2033:DCEMIA>2.0.ZU;2-O
Abstract
An AlGaAs/GaAs ridge directional coupler electro-optic modulator with a voltage-length (VL) product of only 7.0 V mm (L=3.5 mm, V=2 V) is re ported. The low VL product has resulted from the efficient electrode c onfiguration as well as the large overlap between the optical and elec trical fields in the waveguides. Propagation loss of 3.4 dB/cm and the measured I-V characteristics confirm that the contributions from the Franz-Keldysh, charge-carrier, and thermal effects are small. To our k nowledge, this is the lowest VL product ever reported for an electro-o ptic directional coupler modulator utilizing the Pockels effect. An ex tinction ratio of 13 dB was measured for the modulator at 0.83 mum wav elength.