Epitaxial La0.5Sr0.5CoO3 films with very smooth surface morphology wer
e grown on (100) SrTiO3 and (100) MgO substrates by pulsed laser depos
ition. Scanning tunneling microscopy reveals that the thin film is for
med by the coalescence of many aligned square mesas. The growth procee
ds from the edges of terraces which are stacked on the mesa. Spiral gr
owth is never observed. Films display an crystallographically isotropi
c metallic-like electrical conductivity but become semiconductor-like
after vacuum annealing. The energy for carrier activation is 0.3 eV. T
he change of the electrical resistivity of La0.5Sr0.5CoO3 with oxygen
pressure at high temperature is much less sensitive than that of YBa2C
u3O7-x.