LONG-RANGE DISORDERING OF GAAS-ALGAAS MULTIQUANTUM WELLS BY ISOELECTRONIC ANTIMONY IMPLANTS

We show here for the first time that the width of implant damage disor dered regions in GaAs-AlGaAs MQWs can be extended to depths as far as approximately 30 times the implant projected range (R(p)). This is acc omplished by performing room-temperature implants of isoelectronic Sb (R(p) approximately 0.09 mum) in thick 130 period multiquantum well s tructures consisting of alternate layers of approximately 100 angstrom GaAs (L(z)) and approximately 100 angstrom Al0.3Ga0.7As (L(b)). Subse quent to high temperature (850-degrees-C) and long duration (up to 4 h ) furnace anneals, the disordering has been monitored using photolumin escence spectroscopy and secondary ion mass spectroscopy for depth dep endence. The data is tentatively explained assuming a long range migra tion of defects both during implantation and annealing processes.