TERRACING AND STEP BUNCHING IN INTERFACES OF MOLECULAR-BEAM EPITAXY-GROWN (AL)GAAS MULTILAYERS

Authors
ALBREKTSEN O MEIER HP ARENT DJ SALEMINK HWM
Citation
O. Albrektsen et al., TERRACING AND STEP BUNCHING IN INTERFACES OF MOLECULAR-BEAM EPITAXY-GROWN (AL)GAAS MULTILAYERS, Applied physics letters, 62(17), 1993, pp. 2105-2107
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
17
Year of publication
1993
Pages
2105 - 2107
Database
ISI
SICI code
0003-6951(1993)62:17<2105:TASBII>2.0.ZU;2-F
Abstract
The growth terraces in molecular beam epitaxy-grown AlxGa1-xAs multila yers are observed on the ultrahigh vacuum cleaved (110) cross-sectiona l plane using scanning tunneling microscopy. Under regular growth cond itions on 2-degrees off oriented vicinal surfaces, we observe step bun ching of 2-8 atomic layers and a corresponding extension of the terrac e length instead of monolayer steps. These results demonstrate that th e roughness of quantum confinement layers can be studied down to the a tomic scale in a direct way.