EFFECT OF THERMAL RESISTIVITY ON THE CATASTROPHIC OPTICAL-DAMAGE POWER-DENSITY OF ALGALNP LASER-DIODES

Authors
FUJII H UENO Y ENDO K
Citation
H. Fujii et al., EFFECT OF THERMAL RESISTIVITY ON THE CATASTROPHIC OPTICAL-DAMAGE POWER-DENSITY OF ALGALNP LASER-DIODES, Applied physics letters, 62(17), 1993, pp. 2114-2115
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
17
Year of publication
1993
Pages
2114 - 2115
Database
ISI
SICI code
0003-6951(1993)62:17<2114:EOTROT>2.0.ZU;2-9
Abstract
We show that the low catastrophic optical damage power density observe d for AlGaInP laser diodes (LDs) (1/2 to 1/2.9 that of AlGaAs LDs) is mainly attributable to the high thermal resistivities of the materials (5.5 times higher than for AlGaAs LDs) by using a thermal runaway mod el calculation.