THE TRANSIENT-BEHAVIOR OF MULTIDIMENSIONAL PN-DIODES IN LOW INJECTION

An initial boundary value problem modelling the transient behaviour of a pn-junction semiconductor diode is simplified by formal asymptotics , where the scaled minimal Debye length and the scaled intrinsic numbe r are considered as small parameters. The implicit assumption on the b iasing situation is that of low injection. The simplified model is sho wn to be equivalent to an integral relation between the evolution of t he current and of the contact voltage. A simple switching application is governed by a non-linear Volterra integral equation for the current . This equation is shown to possess a unique solution globally in time converging to the unique steady state.