PIXE CHANNELING FOR CONCENTRATION AND LOCATION MEASUREMENTS OF ZN-DOPANTS AND CD-DOPANTS IN INP SINGLE-CRYSTALS

Authors
VOGT J KRAUSE H FLAGMEYER R OTTO G LUX M
Citation
J. Vogt et al., PIXE CHANNELING FOR CONCENTRATION AND LOCATION MEASUREMENTS OF ZN-DOPANTS AND CD-DOPANTS IN INP SINGLE-CRYSTALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 75(1-4), 1993, pp. 360-363
Citations number
11
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
75
Issue
1-4
Year of publication
1993
Pages
360 - 363
Database
ISI
SICI code
0168-583X(1993)75:1-4<360:PCFCAL>2.0.ZU;2-K
Abstract
We present results of the determination of Cd- and Zn-dopants in InP s ingle crystals using the PIXE and RBS spectrometry at our 2 MeV Van de Graaff accelerator. The (100) oriented crystals were doped by thermod iffusion of Cd and Zn atoms. For concentration and localization measur ements we used the ion-channeling technique and energy dispersive spec trometry of proton induced X-ray emission (PIXE). Angular scans of the K-lines of In, Cd and Zn were obtained. The strong In X-rays were att enuated by a rhodium foil in front of the low energy Ge detector. The PIXE-channeling results were compared with SIMS and Hall-effect measur ements.