MEASUREMENT OF PHOSPHORUS-CONTENT IN SILICA LAYERS

Authors
LOH KK SOW CH TAN KH TAN HS TANG SM ORLIC I OSIPOWICZ T
Citation
Kk. Loh et al., MEASUREMENT OF PHOSPHORUS-CONTENT IN SILICA LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 75(1-4), 1993, pp. 364-366
Citations number
3
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
75
Issue
1-4
Year of publication
1993
Pages
364 - 366
Database
ISI
SICI code
0168-583X(1993)75:1-4<364:MOPISL>2.0.ZU;2-B
Abstract
The phosphorus contents in the thin protective layers of P2O5 +SiO2 on a number of silicon wafers were measured by using both PIXE and RBS t echniques. Analyzing the two sets of data with the assumption of a uni form distribution of phosphorus in the oxide layer yielded an apparent discrepancy. It was found by computer simulation that the discrepancy could be removed by introducing nonconstant depth profiles of phospho rus in the analysis of the RBS data. A similar investigation also reve aled that PIXE analysis was not sensitive to the phosphorus depth prof ile.