PIXE AND RBS STUDY OF RADIATION-INDUCED SEGREGATION IN SINGLE-CRYSTALAUSTENITIC STAINLESS-STEEL SUS-304

Citation
K. Kawatsura et al., PIXE AND RBS STUDY OF RADIATION-INDUCED SEGREGATION IN SINGLE-CRYSTALAUSTENITIC STAINLESS-STEEL SUS-304, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 75(1-4), 1993, pp. 367-370
Citations number
15
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
ISSN journal
0168583X
Volume
75
Issue
1-4
Year of publication
1993
Pages
367 - 370
Database
ISI
SICI code
0168-583X(1993)75:1-4<367:PARSOR>2.0.ZU;2-1
Abstract
Radiation-induced segregation in single crystal austenitic stainless s teel SUS 304 induced by 140 MeV Ni10+ ion irradiation was studied. The fluences of Ni ions were 6.4 X 10(14 ) 2.1 X 10(15) and 8.4 X 10(15) cm-2 , respectively. The RBS and PIXE methods by 1.8 MeV He-4+ ion bea ms were applied to analyze the lattice location and displacement of th e minor and major elements of the alloy, and the lattice disordering o f the single crystal, by using the channeling technique. The chi(min) value of RBS from the single crystal is significantly decreased follow ing the high energy Ni ion irradiation, due to the thermal annealing e ffect. The difference in the radiation effect and the thermal annealin g effect is clearly distinguished during the high energy ion irradiati on.