RESONANCE EXCITON LUMINESCENCE OF EPITAXIAL-FILMS OF ZNSE GAAS(100)/

Both resonance luminescence and reflection spectra of excitons of extr emely pure ZnSe epilayers grown on GaAs(100) substrates by computer-co ntrolled photo-assisted vapour phase epitaxy have been studied. It was found that free-exciton transitions resulted in light-hole E(l) and h eavy-hole E(h) luminescence bands for films thicknesses corresponding to either compressive or tensile stress inside ZnSe epilayers. The int ensity ratio of E(l) and E(h) bands have displayed thermodynamic noneq uilibrium between light-hole and heavy-hole excitons for ZnSe films su ffering two-dimensional compressive stress while those with tensile st ress showed equilibrium population of strained-splitted excitonic band s. This result is explained in terms of main mechanisms or excitonic s cattering involving phonons or impurities and effecting the relative p opulation of both heavy-hole and light-hole excitonic bands.