INTERDIFFUSION IN INGAAS GAAS QUANTUM-WELL STRUCTURES AS A FUNCTION OF DEPTH/

Interdiffusion in InGaAs/GaAs quantum wells has been studied using pho toluminescence to follow the development of the diffusion with time in a single sample. Two distinct regimes are seen: a fast initial diffus ion and a second steady-state diffusion. The steady-state diffusion wa s found to be dependent on the depth of the quantum well from the surf ace and to correlate with published data on the indiffusion of gallium vacancies into gallium arsenide.