Electromigration is an important concern in very large scale integrate
d circuits. In narrow, confined metal interconnects used at the chip l
evel, the electromigration flux is resisted by the evolution of mechan
ical stresses in the interconnects. Solutions for the differential equ
ation governing the evolution of back stresses are presented for sever
al representative cases, and the solutions are discussed in the light
of experimental as well as theoretical developments from the literatur
e.